Static fatigue of Hi-Nicalon™-S fiber at elevated temperature in air,steam, and silicic acid-saturated steam

A facility for testing SiC fiber tows in static fatigue and creep at elevated temperatures in air and steam was developed. Static fatigue of Hi-Nicalon™-S fibers was investigated at 800°C-1100°C at applied stresses between 115 and 1250 MPa in air, in Si(OH)₄(g)-saturated steam, and in unsaturated steam. Fibers tested in Si(OH)₄(g)-saturated steam and in air had silica scales throughout the test sections, but those tested in unsaturated steam did not develop scales near the steam injection point. Fiber lifetimes in static fatigue were shortest in unsaturated steam, intermediate in Si(OH)₄(g)-saturated steam, and longest in air. Failure strains did not exceed 0.3%. Steady-state strain rates and static fatigue lifetimes are modelled empirically by the Monkman-Grant relationship. Failure mechanisms are discussed.     

Thermal stability and heat flux investigation of neutron-irradiated nanocrystalline silicon carbide (3C–SiC) using DSC spectroscopy

Nanocrystalline silicon carbide (3C–SiC) particles have been irradiated by neutron flux (2 × 10¹³ n∙cm⁻²s⁻¹) up to 5 h at the TRIGA Mark II type research reactor. At the present work, thermal properties of nanocrystalline 3C–SiC are comparatively investigated before and after neutron irradiation at the 300 K < T < 1300 K ranges. Simultaneously, the DSC (Scanning Calorimetry), TGA (Thermogravimetric Analysis) and DTG (Differential Thermogravimetric Analysis) experiments were conducted from 300 K up to 1300 K. Oxidation mechanism of nanocrystalline 3C–SiC particles have been theoretically and experimentally studied before and after neutron irradiation. The kinetics of mass and heat flux were analysed at the heating and cooling processes using DSC spectroscopy.     

Improving ultraviolet light photocatalytic activity of polyaniline/silicon carbide composites by Fe-doping

It was aimed to prepare polyaniline (Pani) composites, including silicon carbide (SiC) nanofibers doped with iron (Fe) ions. The Fe-doping of SiC was performed to enhance the photocatalytic activity of the composites through the separation of photoexcited mobile charge carriers. For comparison purposes, Pani composites were also prepared with undoped SiC nanofibers. The composite samples were characterized by FTIR, XRD, SEM, EDX, and UV–Vis spectroscopies. Experiments on photocatalytic degradation of methylene blue under ultraviolet light irradiation revealed that Pani/SiC-Fe composites exhibited higher photocatalytic activity when compared with Pani/SiC composites. Almost 22% dye removal was obtained within 300 min with the Pani composite, containing 15 wt.% SiC-Fe. FTIR, XRD, SEM, EDX, and UV–Vis spectroscopies demonstrated that SiC nanofibers were successfully doped with iron ions and incorporated into the polyaniline matrix. The original aspect of this study was to research the photocatalytic activity of polyaniline composites containing Fe-doped SiC nanofibers. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48524.     

Micromechanical properties and microstructural evolution of Amosic-3 SiC/SiC composites irradiated by silicon ions

In this work, Amosic-3 SiC/SiC composites were irradiated to 10 dpa and 115 dpa with 300 keV Si ions at 300 °C. To evaluate its irradiation behaviour and investigate the underlying mechanism, nanoindentation, AFM, Raman and electron microscopy were utilized. Nanoindentation showed that although micromechanical properties declined after irradiation, hardness and Young’s modulus were maintained better under 115 dpa. AFM manifested differential swelling among PyC interface, fiber and matrix and SEM showed irradiation-induced partial interface debonding, which are both more obvious under 115 dpa. TEM revealed the generation and proliferation of amorphous regions, which is according with the decline and broadening of peaks in Raman spectra. The material was almost completely amorphous after irradiated to 10 dpa while recrystallization occurred under 115 dpa. All results mentioned above contribute to the decline of hardness and Young’s modulus and may explain why the micromechanical degradation was more significant under 10 dpa.     

The toughening design of multi-layer antioxidation coating on C/C matrix via SiC-SiCw transition layer grown in-situ

Poor antioxidant and thermal-shock capacities of C/C composites thermal barrier coating (TBC) caused by cracking and shedding of coatings has been a major obstacle blocking the development of C/C composites. Herein, in-situ growth of whisker reinforced silicon carbide transition layer and inter-embedding mechanism of multi-gradient coatings were brought into the design of TBC to enhance the antioxidant and thermal-shock capacities. A three-layer gradient coating SiC-SiC_w/ZrB₂-SiC/ZrSiO₄-aluminosilicate glass (ZAG) from inside to outside, in which ZrB₂-SiC/ZAG serve as oxygen barrier layers with self-healing ability and SiC-SiC_w provides thermal stress buffering and bonding against cracking and shedding of coatings, is designed. The ZAG mainly forms a dense oxygen blocking frontier with self-healing ability through fluidized glass, while the ZrB₂-SiC can react actively with infiltrated oxygen in a way of self-sacrifice, preventing oxygen erosion to C/C matrix and SiC-SiC_w transition layer. As a result, the collaborative work among layers endows this coating with excellent high temperature service performance. This work provides a new insight for the design of excellent TBC.     

高纯半绝缘SiC电阻率影响因素

采用物理气相传输(PVT)法进行高纯半绝缘SiC晶体生长,利用高温真空解吸附以及在系统中通入HCl和H2的方法,有效降低了系统中N、B和Al等杂质的背景浓度。使用二次离子质谱(SIMS)对晶体中杂质浓度测试,N、B和Al浓度分别小于1×1016、1×1015和2×1014 cm-3。对加工得到的晶片进行测试,全片的电阻率均在1×1010Ω·cm以上,微管密度小于0.02 cm-2,(004)衍射面的X射线摇摆曲线半高宽为34″。结果表明,该方法可以有效降低SiC晶体中N、B和Al等杂质浓度,提升SiC晶片的电阻率。使用该方法成功制备了4英寸(1英寸=2.54 cm)高纯半绝缘4H-SiC晶体。     

Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals

V-doped semi-insulating (VDSI) SiC crystal is a promising substrate for high-frequency electronic devices achieved using GaN epitaxial films. However, V doping in a SiC crystal is difficult to control owing to the different sublimation temperatures of VC and SiC. The amount of V changes depending on the growth sequence, which has been a significant concern in VDSI SiC substrates in terms of wafer reliability.In this study, therefore, we aimed to synthesize a single source by vaporizing Si, C, and V under the same conditions to improve the doping issue in VDSI SiC. We synthesized V-doped SiC powder as the starting material for VDSI SiC substrate based on thermodynamic modeling, and the synthesized powder was used to grow a VDSI SiC crystal via physical vapor transport.Finally, considering the homogeneous V concentration in the grown crystal, the synthesized V-doped SiC was observed to be effective to grow VDSI SiC independent of the growth sequence.     

The fabrication and mechanical properties of SiC/SiC composites prepared by SLS combined with PIP

Traditionally, SiC components with complex shapes are very difficult or even impossible to fabricate. This paper aims to develop a new manufacturing process, combining selective laser sintering (SLS), cold isostatic pressing (CIP) and polymer infiltration pyrolysis (PIP), to manufacture complex silicon carbide parts and improve the mechanical properties of silicon carbide ceramic parts. The density and porosity of SiC/SiC composites were measured. Furthermore, the mechanical properties of the specimens with cold isostatic pressing and the specimens without cold isostatic pressing were compared. The bending strength of the specimens with cold isostatic pressing was 201?MPa, and the elastic modulus was 1.27?GPa. And, the bending strength of the specimens without cold isostatic pressing was 142?MPa, and the elastic modulus was 0.88?GPa. Increasing the density of SiC/SiC can enhance the mechanical properties of SiC/SiC composites.     

Influences of pre-forming on preparation of SiC by microwave heating

Silicon carbide (SiC) crystals were synthesized by microwave sintering using coal and tetraethoxysilane (TEOS) as raw materials. A sol-gel method was carried out to coat coal mineral particles with silicon dioxide (SiO₂). The mixed raw powders were pre-formed by uniaxial pressing into cylindrical pellets in dimension of ~ 30?×?3?mm². The pre-forming pressure was selected at 0?MPa, 1?MPa, 2?MPa, 3?MPa, 4?MPa and 5?MPa respectively, which led to different apparent density of the green pellets. The influence of apparent density of green pellets on microwave heating behavior was investigated. Different microwave thermal effects were analyzed. Techniques of XRD、SEM were carried out to characterize samples. It was found that pre-forming pressure showed crucial influences on microwave thermal effects and electric field (E-field) intensification. No SiC crystal could be formed without pre-forming pressure. Pre-forming pressure might be the prerequisite for synthesis of SiC by microwave heating. Five consecutive and indispensable heating stages including accumulation of residual air, microwave plasma generation, complex chemical reactions, nucleation and grain growth of SiC crystallites could be distinguished for samples under pre-forming pressure. Different pre-forming pressure leads to changes in heating behavior as well as morphologies of SiC crystals. ~ 4?MPa might be the optimized pre-forming pressure for both microwave plasma effects and E-field intensification.     

Improved oxidation resistance of expanded graphite through nano SiC coating

Expanded graphite with nano SiC and amorphous SiC_xO_y coating was successfully prepared through pyrolysing silane coupling agent (SCA), where the grafting of SCA dominated the final products. The results show that mainly amorphous SiC_xO_y coating covers expanded graphite at 1000 °C, regardless of the SCA concentration. In comparison, nano SiC coating can be synthesized at 1200 °C depending on the good dispersion of SCA (with a SCA concentration of 50 vol%). The formed SiC coating contributes to much higher peak oxidation temperature (812.1 °C) than 678.0 °C of the pure expanded graphite. Meanwhile, the oxidation activation energies of expanded graphite are remarkably improved from 149.15 kJ/mol to 176.16 kJ/mol (based on Kissinger method), attributing to the derived nano SiC and SiC_xO_y coating.